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| savantic semiconductor product specification silicon npn power transistors BUH715AF d escription with to-3pfa package high voltage,high speed applications horizontal deflection for monitors. switching mode power supplies pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 700 v v ebo emitter-base voltage open collector 10 v i c collector current (dc) 10 a i cm collector current (pulse) 20 a i b base current (dc) 5 a i bm base current (pulse) 10 a p tot total power dissipation t c =25 57 w t j operating junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 2.2 /w
savantic semiconductor product specification 2 silicon npn power transistors BUH715AF characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma ;i b =0 700 v v (br)ebo emitter-base breakdown voltage i e =10ma ;i c =0 10 v v cesat collector-emitter saturation voltage i c =7a ;i b =1.5a 1.5 v v besat base-emitter saturation voltage i c =7a ;i b =1.5a 1.3 v i ces collector cut-off current v ce =1500v ; v be =0 t j =125 1 2 ma i ebo emitter cut-off current v eb =5v; i c =0 100 a h fe-1 dc current gain i c =1a ; v ce =5v 10 h fe-2 dc current gain i c =7a ; v ce =5v 8 16 switching times t s storage time 2.1 3.1 s t f fall time i c =7a;i b1 =1.5a;i b2 =3.5a; v cc =400v 140 210 ns savantic semiconductor product specification 3 silicon npn power transistors BUH715AF package outline fig.2 outline dimensions(unindicated tolerance: 0.30mm) |
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